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Frequency Dependence of Hopping Conductance in Electron Irradiated Semiconductors

Published online by Cambridge University Press:  28 February 2011

S. D. Kouimizi  and
J. J. Thomson
S. D. Kouimizi
Affiliation:
Physical Laboratory, University of Reading, Reading, U.K., and University of Thessaloniki, Thessaloniki, Greece
J. J. Thomson
Affiliation:
Physical Laboratory, University of Reading, Reading, U.K., and University of Thessaloniki, Thessaloniki, Greece
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Abstract

A sufficient degree of electron irradiation induced damage in Si, Ge, InSb, and InAs has allowed the observation of hopping conductance having a sublinear frequency dependence of s ∝ ws with s ≤ 1. The dependence of s on both the degree of the induced damage and on temperature is studied and discussed in terms of the quantum mechanical tunnelling and the correlated barrier hopping mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 285
Copyright
Copyright © Materials Research Society 1989

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