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Formation Of Hydrogen Molecules In Crystalline Silicon Treated With Atomic Hydrogen

Published online by Cambridge University Press:  15 February 2011

K. Murakami ,
N. Fukata ,
S. Sasaki ,
K. Ishioka ,
K. G. Nakamura ,
M. Kitajima ,
S. Fujimura ,
J. Kikuchi  and
H. Haneda
K. Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennoudai 1–1–1, Tsukuba, Ibaraki 305, Japan; murakami@mat. ims.tsukuba.ac.jp
N. Fukata
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennoudai 1–1–1, Tsukuba, Ibaraki 305, Japan; murakami@mat. ims.tsukuba.ac.jp
S. Sasaki
Affiliation:
Institute of Materials Science, University of Tsukuba, Tennoudai 1–1–1, Tsukuba, Ibaraki 305, Japan; murakami@mat. ims.tsukuba.ac.jp
K. Ishioka
Affiliation:
National Research Institute for Metals, Sengen 1–2–1, Tsukuba, Ibaraki 305, Japan;
K. G. Nakamura
Affiliation:
National Research Institute for Metals, Sengen 1–2–1, Tsukuba, Ibaraki 305, Japan;
M. Kitajima
Affiliation:
National Research Institute for Metals, Sengen 1–2–1, Tsukuba, Ibaraki 305, Japan;
S. Fujimura
Affiliation:
Process Development Division, Fujitsu Ltd., Kawasaki, Kanagawa 211, Japan;
J. Kikuchi
Affiliation:
Process Development Division, Fujitsu Ltd., Kawasaki, Kanagawa 211, Japan;
H. Haneda
Affiliation:
National Institute for Research in Inorganic Materials, Namiki 1–1, Tsukuba, Ibaraki 305, Japan
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Abstract

Hydrogen molecules have been formed in crystalline silicon at various temperatures by a hydrogen-atom remote treatment. The Raman spectrum of the vibrational lines of hydrogen molecules in crystalline silicon is detected for silicon samples treated at temperatures between 250 and 500° C. The maximum production is obtained at 400° C. The Raman spectrum of hydrogen molecules in silicon observed at room temperature exhibits a frequency shift of around 4158 cm−1 and a very broad half-width of approximately 34 cm−1. Isotope shift also can be observed at around 2990 cm−1 in silicon treated with deuterium atoms at 400° C. The frequency shifts of the observed lines are in close agreement with those reported for molecular hydrogen and deuterium in gas, liquid, and solid phases. We discuss a model for the hydrogen molecule configuration and rule out the possibility of high-pressure hydrogen molecular gas in microvoids in crystalline silicon. These results indicate that hydrogen molecules exist at the tetrahedral interstitial sites in crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 269
Copyright
Copyright © Materials Research Society 1997

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References

[1] See for example, Zheng, J.F. and Stavola, M., Phys. Rev. Letters 76, 1154 (1996).Google Scholar
[21] Chang, K.J. and Chadi, D.J., Phys. Rev. Lett. 60, 1422 (1988).Google Scholar
[3] Walle, C.G. Van de, Phys. Rev. B 49, 4579 (1994).Google Scholar
[4] Murakami, K.,Fukata, N., Sasaki, S., Ishioka, K., Kitajima, M., Fujimura, S., Kikuchi, J., and Haneda, H., Phys. Rev. Letters 77, 3161 (1996).Google Scholar
[5] Fukata, N., Sasaki, S., Murakami, K., Ishioka, K., Kitajima, M., Fujimura, S., and Kikuchi, J., Jpn. J. Appl. Phys. 35, L1069 (1996).Google Scholar
[6] Chadi, D.J. and Park, C.H., Phys. Rev. 52, 8877 (1995), and J.D. Holbeck, B.B. Nielsen, R. Jones, P. Sitch, and S. Orberg, Phys. Rev. Lett. 71, 875 (1993).Google Scholar
[7] Stoicheff, B.P., Can. J. Phys. 35, 730 (1957).Google Scholar
[8] Bhatnagar, S.S., Allin, E.J., and Welsh, H.L., Can. J. Phys. 40, 9 (1962).Google Scholar
[9] Fukata, N., Sasaki, S., Fujimura, S., Haneda, H., and Murakami, K., Jpn. J. Appl. Phys. 35, 3937 (1996).Google Scholar
[10] Stutzmann, M., Beyer, W., Tapfer, L. and Herrero, C.P., Physica B 170, 240 (1991).Google Scholar
[11] Heyman, J.H., Ager, J.W. III, Haller, E.E., Johnson, N.M., Walker, J., and Doland, C.M., Phys. Rev. B 45, 13363 (1992).Google Scholar
[12] Fukata, N., Sasaki, S., Murakami, K., Ishioka, K., Kitajima, M., Fujimura, S., Kikuchi, J., and Haneda, H., to be submitted to Phys. Rev. B.Google Scholar
[13] Hartwig, C.M. and Vitko, J. Jr., Phys. Rev. B 18, 3006 (1978).Google Scholar
[14] Nakamura, K.G., Ishioka, K., Kitajima, M., and Murakami, K.; Solid State Comm. (in press).Google Scholar