Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-14T10:38:37.352Z Has data issue: false hasContentIssue false
  • English
  • Français

Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures

Published online by Cambridge University Press:  21 February 2011

P. M. Petroff ,
Xueyu Qian ,
Per Olof Holtz ,
R. J. Simes ,
J. H. English ,
J. Merz  and
R. Kubena
P. M. Petroff
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
Xueyu Qian
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
Per Olof Holtz
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
R. J. Simes
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
J. H. English
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
J. Merz
Affiliation:
Materials Department and Electrical and Computer Engineering Department,University of California,Santa Barbara,CA. 93106
R. Kubena
Affiliation:
Hughes Research Laboratories,3011 Malibu Canyon Road,Malibu,CA 90265.
Get access

Abstract

The effects of Implantation Enhanced Interdiffusion (IEI) in GaAs-GaAlAs quantum well structures are investigated. A Focused Ion Beam (FIB) source is used to implant narrow lines (500Å wide) with Ga+ ions. IEI in these structures is characterized by low temperature Cathodoluminescence. The dose effects and annealing kinetics dependence on IEI are presented. An unusual damage distribution which produces IEI deep below the surface is observed for the case of FIB implant. The possible origins of this effect and the limits of IEI for processing quantum wires and boxes are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 55
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

(1) Kubena, R. and Ward, J.W.. Appl.Phys.Lett. 51,231960 (1987).CrossRefGoogle Scholar
(2) Hiramoto, T.,Hirayama, K.,Iye, Y.,Ikoma, T.. Appl.Phys.Lett. 51,16,1620 (1987).CrossRefGoogle Scholar
(3) Hirayama, Y., Suzuki, Y. and Okamoto, H., Jpn. Appl. Phys., 24, 1498 (1985).CrossRefGoogle Scholar
(4) Cibert, J., Petroff, P.M., Werder, D.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl.Phys.Lett. 49,223(1986)Google Scholar
(5) Kobayashi, J. Japn.J.Appl.Phys.L385 (1986).Google Scholar
(6) Dobisz, E.A., Tell, B., Craighead, H.G. and Tamargo, M., J. Appl. Phys 60 4150 (1986).CrossRefGoogle Scholar
(7) Ishida, K.,Matsui, K.,Fukunaga, T.,Kobayashi, J.,Morita, T.,Miyaucho, E. and Nakashima, H. Appl.Phys.Lett. 51,2,109(1987)Google Scholar
(8) Hirayama, H., Surf.Science,174,98,(1986).Google Scholar
(9) Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49 1275 (1986).Google Scholar
(10) Petroff, P.M., Cibert, J., Gossard, A.C., Dolan, G.J., Tu, C.W., J. Vac. Sci. Techn, B54 (1987).Google Scholar
(11) Burenkov, A.F.,Komarov, F.F.,Kumakov, M.A.,Temkin, M.M.,”Tables of ion implantation spatial distribution”Gordon and Breach Science Publishers” (N.Y.) (1986).Google Scholar
(12) Brown, W.L., Proceedings of the International Ion Engineering Congress, Edited by Tkagi, T., Kyoto (1983)Google Scholar
(13) Lang, D.V. and Kimerling, L.C. Phys.Rev.Lett. 33,489(1974).Google Scholar
(14) Cibert, J.,Petroff, P.M..Phys.Rev.B36,6,3243 (1987).Google Scholar