Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-02-11T20:08:54.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Fluorine-Enhanced Si:Er Light Emission

Published online by Cambridge University Press:  22 February 2011

F.Y.G. Ren ,
J. Michel ,
D.C. Jacobson ,
J.M. Poate  and
L.C. Kimerling
F.Y.G. Ren
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
J. Michel
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L.C. Kimerling
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
Get access

Abstract

An erbium-fluorine complex is 100 times more effective than an erbium-oxygen complex in generating light emission at 1.54 µm in Si:Er. The luminescence light intensity is linearly proportional to the total retained F atoms in Si after heat treatment. F enhancement in light emission in Si:Er is eventually limited by the damage associated with high dose F implantation. The optimum annealing temperature to achieve the maximum intensity is found to decrease slightly from 1000ºC to 800ºC as the initial F implanted concentration increases. The Si:Er heat treatment process and the optimum processing window are determined by the interaction of three different processes: damage recovery/complex formation, F out-diffusion and Er-F complex dissociation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 493
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Zheng, B., Michel, J., Ren, F.Y.G., Jacobson, D.C., Poate, J.M., and Kimerling, L.C., (submitted to Appl. Phys. Lett.).Google Scholar
2 Koker, D.M., and Kimerling, L.C., to be published.Google Scholar
3 Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.-H., Poate, J.M., and Kimerling, L. C., J. Appl. Phys. 70, 2672 (1991).Google Scholar
4 Favennec, P.N., Haridon, H.L., Moutonnet, D., Salvi, M. and Gauneau, M., Japan. J. of Appl. Phys. 29, L524(1990).Google Scholar
5 Reiss, H., Fuller, C.S., and Morin, F. J., Bell System Tech. J. 35, 535 (1956).Google Scholar
6 Michel, J., Kimerling, L.C., Benton, J.L., Eaglesham, D.J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Xie, Y.-H., and Ferrante, R.F., Material Science Forum, vol. 83–87, p653(1992).Google Scholar
7 Jeng, S.P., Ma, T.-P., Canteri, R., Anderle, M. and Rubloff, G.W., Appl. Phys. Lett. 61 (11), 1310 (1992).Google Scholar
8 Michel, J., Ren, F.Y.G., Zheng, B., Jacobson, D.C., Poate, J.M., and Kimerling, L.C. in “Defects in Semiconductors 17”, (Tran. Tech. Publications Ltd., Switzeland, 1993).Google Scholar