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Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN

Published online by Cambridge University Press:  21 March 2011

Qing Yang ,
Henning Feick ,
Rob Armitage  and
Eicke R. Weber
Qing Yang
Affiliation:
Department of Materials Science and Engineering, Univ. of California, Berkeley, California 94720, USA
Henning Feick
Affiliation:
Department of Materials Science and Engineering, Univ. of California, Berkeley, California 94720, USA
Rob Armitage
Affiliation:
Department of Materials Science and Engineering, Univ. of California, Berkeley, California 94720, USA
Eicke R. Weber
Affiliation:
Department of Materials Science and Engineering, Univ. of California, Berkeley, California 94720, USA
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Abstract

High-quality GaN layers grown by hydride-vapor phase epitaxy (HVPE) and homoepitaxial layers grown thereon by molecular beam epitaxy (MBE) are studied after fast proton irradiation. A radiation-induced decrease of the band edge luminescence is observed. Time-resolved photoluminescence (PL) reveals a significant reduction of the carrier lifetime. A lifetime degradation constant of Kt = 4×10-15cm2/ns is reported for very thick HVPE GaN, and large variations are observed for the different layers. Partial recovery of the carrier lifetime and PL intensity with annealing is observed for thin HVPE GaN but not for the MBE overgrowth layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.36.1
Copyright
Copyright © Materials Research Society 2002

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Footnotes

*

on leave from center of advanced european studies and research (caesar), Bonn, Germany

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