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Evidence For Non-Correlation Between The 0.15 eV And 0.44 eV Cu-Related Acceptor Levels In GaAs

Published online by Cambridge University Press:  15 February 2011

K. Leosson  and
H. P. Gislason
K. Leosson
Affiliation:
Science Institute, University of Iceland, Dunhagi 3, Reykjavik, Iceland
H. P. Gislason
Affiliation:
Science Institute, University of Iceland, Dunhagi 3, Reykjavik, Iceland
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Abstract

We present investigations on the two dominating acceptor levels observed in Cu-diffused GaAs which have frequently been attributed to the two ionization levels of a double CuGa acceptor. We employed plasma hydrogenation and lithium diffusion followed by reverse-bias and zero-bias annealing to passivate and subsequently reactivate the Cu-related acceptor levels. Deep-level current-transient spectroscopy measurements reveal that the two levels are independently reactivated, strongly indicating that they arise from different defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 453
Copyright
Copyright © Materials Research Society 1997

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References

[1] Hall, R.N. and Racette, J.H., J. Appl. Phys. 35, 379 (1963)Google Scholar
[2] Kullendorff, N., Jansson, L., Ledebo, L-Å., J. Appl. Phys. 54, 3203 (1983)Google Scholar
[3] Allison, H.W., Fuller, C.S., J. Appl. Phys. 36, 2519 (1965)Google Scholar
[4] Milnes, A.G., Advances in Electronics and Electron Physics 61, 63 (1983)Google Scholar
[5] Hofmann, G., Madok, J., Haegel, N.M., Roos, G., Johnson, N.M., Haller, E.E., Appl. Phys. Lett. 61, 2914 (1992)Google Scholar
[6] Egilsson, T., Gislason, H.P., and Yang, B.H., Phys. Rev. B, 50 1996 (1994)Google Scholar
[7] Sah, C.T., Forbes, L., Rosier, L.I., Tasch, H.F., Jr., Solid-State Electron. 13, 759 (1970)Google Scholar
[8] Pearton, S.J., J. Appl. Phys. 53, 4509 (1982)Google Scholar
[9] Lagowski, J., Kaminska, M., Parsey, J.M., Jr., Gatos, H.C., Lichtensteiger, M., Appl. Phys. Lett. 41, 1078 (1982)Google Scholar
[10] Dautremont-Smith, W.C., Nabity, J.C., Swaminathan, V., Stavola, M., Chevallier, J., Tu, C.W., Pearton, S.J., Appl. Phys. Lett. 49, 1098 (1986)Google Scholar
[11] Egilsson, T., Yang, B.H., Gislason, H.P., Physica Scripta T 54, 28 (1994)Google Scholar
[12] Roush, R.A., Stoudt, D.C., Mazzola, M.S., Appl. Phys. Lett. 62, 2670 (1993)Google Scholar
[13] Gislason, H.P., Egilsson, T., Leosson, K., Yang, B.H., Phys. Rev. B, 51, 9677 (1995)Google Scholar
[14] Janzén, E., Linnarsson, M., Monemar, B., Kleverman, M., Mat. Res. Soc. Sym. Proc. 163, 169 (1990)Google Scholar