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Enhancement of Oxidation Resistance of Silicon Carbide by High-Dose and Multi-Energy Aluminum Implantation

Published online by Cambridge University Press:  22 February 2011

Zunde Yang ,
Honghua Du ,
Matthew Libera ,
Stephen P. Withrow ,
Luis M. Casas  and
Richard T. Lareau
Zunde Yang
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
Honghua Du*
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
Matthew Libera
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
Stephen P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
Luis M. Casas
Affiliation:
Army Research Laboratory, Fort Monmouth, NJ 07703
Richard T. Lareau
Affiliation:
Army Research Laboratory, Fort Monmouth, NJ 07703
*
To whom correspondence should be addressed
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Abstract

High-dose and multi-energy aluminum implantation of α-SiC (0001) was carried out to achieve a broad aluminum distribution extending from the sample surface to a depth of approximately 350 nm. Oxidation resistance of the implanted crystals was studied in 1 atm flowing oxygen at 1300°C. Aluminum implantation resulted in a 45% improvement in the oxidation resistance of α-SiC as compared with unimplanted crystals due to the formation of structurally dense mullite (3A12O3.2SiO2) in the oxidation scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 281
Copyright
Copyright © Materials Research Society 1994

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