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Electron Transport in the III-V Nitride Alloys

Published online by Cambridge University Press:  10 February 2011

B. E. Foutz ,
S. K. Otleary ,
M. S. Shur  and
L. F. Eastman
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
S. K. Otleary
Affiliation:
Faculty of Engineering, University of Regina, Regina, Saskatchewan, Canada S4S 0A2
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
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Abstract

We study electron transport in the alloys of aluminum nitride and gallium nitride and alloys of indium nitride and gallium nitride. In particular, employing Monte Carlo simulations we determine the velocity-field characteristics associated with these alloys for various alloy compositions. We also determine the dependence of the low-field mobility on the alloy composition. We find that while the low-field mobility is a strong function of the alloy composition, the peak and saturation drift velocities exhibit a more mild dependence. Transient electron transport is also considered. We find that the velocity overshoot characteristic is a strong function of the alloy composition. The device implications of these results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 445
Copyright
Copyright © Materials Research Society 1999

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References

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