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The Electron Mobility in Amorphous Silicon Under Double Injection
Published online by Cambridge University Press: 26 February 2011
Abstract
The transport of a pulse of photogenerated excess electrons has been investigated in a-Si p+-i-n+ junctions under forward bias in the presence of strong double injection. It is found that the electron drift mobility is completely independent of forward current densities of up to 0.33 Acm−2, in disagreement with the work of Silver et al. We suggest that the experimental disagreement arises from problems inherent in the voltage step technique of mobility measurement.
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- Copyright © Materials Research Society 1988
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