Hostname: page-component-6bf8c574d5-8gtf8 Total loading time: 0 Render date: 2025-02-19T11:51:32.432Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films

Published online by Cambridge University Press:  17 March 2011

Tadashi Watanabe ,
Nobuyuki Andoh  and
Toshiyuki Sameshima
Tadashi Watanabe
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Nobuyuki Andoh
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Toshiyuki Sameshima
Affiliation:
Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan
Get access

Abstract

In this paper, changes in electrical properties of laser crystallized silicon films doped with 8.5×1017-cm−3-phosphorus atoms as a function of laser shot number are investigated. The samples are treated with plasma hydrogenation for 30 sec at 130 Pa at 250 °C and additional H2O vapor heat treatment at 260 °C for 3 hours with 1.3 MPa. The electrical conductivity at room temperature become about 10−6∼10−-5 S/cm as laser shot number increases from 1 to 100. After hydrogenation and additional H2O vapor heat treatment, electrical conductivity remarkably increases to 100∼101S/cm. At laser irradiation of 20 or 50 shots after both treatments, the density of defect at deep level states and tail states are determined 1.15×1017 cm−3 and 5.7×1017cm−3 using an analysis program. Potential barrier height at grain boundary is 0.048 eV. The effective carrier density and carrier mobility are markedly increased up to1017cm−3 and 209 cm2/Vs by hydrogenation and additional H2O vapor heat treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A6.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Serikawa, T., Shirai, S., Okamoto, A. and Suyama, S., Jpn. J. Appl. Phys. Lett. 28 (1989) pp.1871.Google Scholar
[2] Kuriyama, H., Nohda, T., Aya, Y., Kuwahara, T., Wakisaka, K., Kiyama, S. and Tsuda, T., Jpn. J. Appl. Phys. 33(1994) pp. 5657 Google Scholar
[3] Mei, P., Boyce, J. B., Hack, M., Lujian, R. A., Johnson, R. I., Anderson, G. B., Fork, D. K. and Ready, S. E., Appl. Phys. Lett. 64(1994) pp.1132.Google Scholar
[4] Furuta, M., Kawamura, T., Yoshioka, T. and Miyata, Y., IEEE Trans.Electron Devices 40 (1993) pp1964.Google Scholar
[5] Sera, K., Asada, H., Okumura, F., Tanabe, H., Nakamura, K., Tada, A. and Kaneko, S., Extended Abstruct of 1991 int. Conf. On Solid State Device and Materials, Tsukuba, 1991, p590.Google Scholar
[6] Sameshima, T., Saitoh, K., Aoyama, N., Higashi, S., Kondo, M. and Matsuda, A., Jpn. J. Appl. Phys. 38 (1999) pp. 1892.10.1143/JJAP.38.1892Google Scholar
[7] Sameshima, T., Saitoh, K., Sato, M., Tajima, A. and Takashima, N., Jpn. J. Appl. Phys. Lett. 36 (1997) pp. L1360–L1363.Google Scholar
[8] Sameshima, T., Mat. Res.Soc.Symp.Proc.Vol.536 (1999) pp 427–438.Google Scholar
[9] Sameshima, T., Saito, K., Aoyama, N., Tanda, M., Kondo, M., Matsuda, A. and Higashi, S.: Technical Digfest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, Japan,1999) p211.Google Scholar
[10] Wu, I.W., Lewis, A.G., Huang, T.Y. and Chiang, A., IEEE Electron Device Lett. 12(1991) pp.181.Google Scholar
[11] Miura, U., Rossi, B. and Khan, B., J. Electrochem. Soc. 138(1991) pp. 3420.Google Scholar
[12] Jackson, W.B., Johnson, N.M., Tasai, C.C., Wu, I.W., Chiang, A. and Smith, D., Appl.Phys. Lett. 61(1992) pp. 1670.Google Scholar
[13] Asada, K., Sakamoto, K., Watanabe, T.,T.Sameshima and Higashi, S., Jpn.J.Appl.Phys. 39 (2000) pp.3882–3887.Google Scholar
[14] Sameshima, T., Satoh, M., Sakamoto, K., Hisamatsu, A. and Ozaki, K., Jpn.J.Appl.Phys. 37 (1998) pp.L112–L114.Google Scholar
[15] Sameshima, T., Satoh, M., Sakamoto, K., Ozaki, K. and Saitoh, K., Jpn.J.Appl.Phys. 37 (1998) pp.4254–4257.10.1143/JJAP.37.4254Google Scholar
[16] Seto, J. Y. W., J. Appl. Phys. 46, pp.5247 (1975).Google Scholar
[17] Sakamoto, K., Sameshima, T., Tsunoda, Y. and Higashi, S., Proc. Workshop on Active Matrix Liquid Crystal Displays (Tokyo, Japan 1999) p.131.Google Scholar
[18] Baccarani, G., Ricco, B., J. Appl. Phys. 19, pp.5565 (1978).Google Scholar
[19] Sameshima, T., Usui, S. and Tomita, H., Jpn. J. Appl. Phys. 26(1987) pp. L1678.Google Scholar
[20] Tsunoda, Y., Sameshima, T. and Higashi, S., Jpn. J. Appl. Phys. 39(2000) pp.L1656.Google Scholar