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Electrical And Structural Properties Of LT-GaAs: Influence Of As/Ga Flux Ratio And Growth Temperature

Published online by Cambridge University Press:  15 February 2011

M. Luysberg ,
H. Sohn ,
A. Prasad ,
P. Specht ,
H. Fujioka ,
R. Klockenbrink  and
E. R. Weber
M. Luysberg
Affiliation:
present address: IFF, Research Center Jülich, 52425 Jülich, Germany, me.mail.luysberg@kfajuelich.de
H. Sohn
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
A. Prasad
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
P. Specht
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
H. Fujioka
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
R. Klockenbrink
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
E. R. Weber
Affiliation:
Dept. of Materials Science and Mineral Engineering, UC Berkeley, CA 94720
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Abstrac

The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 485
Copyright
Copyright © Materials Research Society 1997

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References

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