Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-02-11T20:47:05.294Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Reliability Characteristics of Silicon-Rich Oxide for Non-Volatile Memory Applications

Published online by Cambridge University Press:  15 February 2011

Bikas Maiti  and
Jack C. Lee
Bikas Maiti
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Jack C. Lee
Affiliation:
Microelectronics Research Center, University of Texas, Austin, TX 78712
Get access

Abstract

Non-stoichiometric films are particularly attractive for non-volatile memory applications. In this work low-pressure chemical vapor deposition (LPCVD) using silane and nitrous oxide gases were used to deposit thin silicon-rich SiO2 films. Reliability issues concerning these nonstoichiometric oxides have been studied in comparison to ultrathin conventional thermal oxides. It has been found that with an increase in the silicon content, the current injection efficiency at a given electric field increases. This has significant advantage in terms of low programming voltage applications. There is also a considerable reduction in electron trapping, extremely large increase in charge-to-breakdown and negligible interface state generation in comparison to ultrathin thermal oxides. These characteristics of non-stoichiometric oxide films can be explained by a modified conduction mechanism which in turn is due to dispersed crystallites in the oxide film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 255
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lai, S. K., Dham, V. K. and Guterman, D., IEDM Tech. Digest, p. 580–583, 1986.Google Scholar
2. Wegner, H. A. R., IEDM Tech. Digest, p. 480, 1984.Google Scholar
3. DiMaria, D. J., DeMeyer, K. M., Serrano, C. M., and Dong, D. W., J. Apl. Phys., vol.52, p. 4825, 1981.Google Scholar
4. Hamasaki, M., Adachi, T., Wakayama, S., and Kikuchi, M., J. Appl. Phys. 49, p 3987, 1978.Google Scholar
5. Learn, A. J. and Jackson, R. B., J. Electrochem. Soc., p. 2975, 1985.Google Scholar
6. Dvurechensky, A. V., Edelman, F. L. and Ryazantsev, I. A., Thin Solid Films, vol.91, p. L55, 1982.Google Scholar
7. DiMaria, D. J. and Dong, D. W., J. Appl. Phys., vol.51(5), p. 2722, 1980.Google Scholar
8. DiMaria, D. J., Dong, D. W. and Pesavento, F. L., J. Appl. Phys., vol.55, p. 3000, 1984.CrossRefGoogle Scholar
9. Dong, D., Irene, E. A. and Young, D. R., J. Electrochem. Soc., vol.125, no.5, p. 819, 1978.Google Scholar
10. DiMaria, D. J., Theis, T. N., Kirtley, J. R., Pasavento, F. L., Dong, D. W., and Brorson, S. D., J. Appl. Phys., 57(4), p. 1214, 1985.Google Scholar
11 Lai, S. K., Lee, J. and Dham, V. K., IEDM Tech. Digest, p. 190, 1983 Google Scholar
12. Hwang, H., Ting, W., Maiti, B., Kwong, D-L and Lee, J., Appl. Phys. Lett. 57(10), p. 1010,1990.Google Scholar