Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-19T03:38:11.043Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Se implantation on the compositional disordering of GaAs-AlAs superlattices

Published online by Cambridge University Press:  28 February 2011

T. NAKAMURA ,
S. KOMIYA ,
T. INATA ,
S. MUTO  and
S. HIYAMIZU
T. NAKAMURA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. KOMIYA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
T. INATA
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. MUTO
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
S. HIYAMIZU
Affiliation:
I. UMEBU FUJITSU LTD., 10–1 Wakamiya Morinosato, Atsugi 243–01, Japan
Get access

Abstract

The LO phonon frequency evaluated from Raman spectra identifies two compositional disordering mechanisms in GaAs-AlAs superlattices. For a high Se dose, the LO phonons of the Al0.5Ga0.5As alloy are observed from the asimplanted samples. That means the compositional disordering occurred just by Se implantation. The probable mechanism for this disordering is the implantation of Ga atoms into the AlAs layer and of Al atoms into the GaAs layer. The superlattices implanted at a low dose are disordered by the subsequent annealing. The mechanism is the enhanced interdiffusion of both Ga and Al atoms between the GaAs and AlAs layers by Se thermal diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 339
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Laidig, W. D., Holonyak, N., Jr., Camras, M. D., Hess, K., Coleman, J. J., Dapkus, P. D., and Bardeen, J., Appl. Phys. Lett. 38, 776 (1981).Google Scholar
2. Fukuzawa, T., Semura, S., Saito, H., Ohta, T., Uchida, Y., and Nakashima, H., Appl. Phys. Lett. 45, 1 (1984).CrossRefGoogle Scholar
3.J. A. Van Vechten, J. Vac. Sci. Technol. B2, 569 (1984).Google Scholar
4. Camras, M. D., Coleman, J. J., Holonyak, N., Jr., Hess, K., Dapkus, P. D., and Kirkpatrick, C. G., in International Symposium on GaAs and Related Compounds, Albuquerque, 1982, edited by G. E. Stillman (Institute of Physics, London, 1983), pp. 233-239.Google Scholar
5. Coleman, J. J., Dapkus, P. D., Kirkpatrick, C. G., Camras, M. O., and Holonyak, N., Jr., Appl. Phys. Lett. 40, 904 (1982).Google Scholar
6. Hirayama, Y., Horikoshi, Y., and Okamoto, H., Jpn. J. Appl. Phys. 23, 1568 (1984).Google Scholar
7. Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Jr., Coleman, J. J., and Burnham, R. D., Appl. Phys. Lett. 47, 130 (1985).Google Scholar
8. Hirayama, Y., Suzuki, Y., Tarucha, S., and Okamoto, H., Jpn. J. Appl. Phys. 24, L516 (1985).Google Scholar
9. Kaliski, R. W., Gavrilovic, P., Meehan, K., Gavrilovic, J., Hsieh, K. C., Jackson, G. S., Holonyak, N., Jr., Coleman, J. J., Burnham, R. D., Thornton, R. L., and Paoli, T. L., J. Appl. Phys. 58, 101 (1985).CrossRefGoogle Scholar
10. Kawabe, M., Matsuura, N., Shimizu, N., Hasegawa, F., and Nannichi, Y., Extended Abstruct of the 16th (1984 International) Conf. Solid State Devices & Materials, Kobe, 1984 (Business Center for Academic Societies Japan, Tokyo, 1984)pp. 611.Google Scholar
11. Okamura, S., Nishi, H., Inata, T., and Hashimoto, H., Appl. Phys. Lett. 40, 689 (1982).Google Scholar
12. Tatsuta, S., Inata, T., Okamura, S., and Hiyamizu, S., Jpn. J. Appl. Phys. 23, L147 (1984).Google Scholar
13. Nakamura, T. and Katoda, T., J. Appl. Phys. 53, 5870 (1982).Google Scholar
14. Sturge, M. D., Phys. Rev. 127, 768 (1962).Google Scholar
15. Nakamura, T., Komiya, S., Inata, T., Muto, S., Hiyamizu, S., and Umebu, I., (to be published).Google Scholar
16. Tsu, R., Kawamura, H., and Esaki, L., Proc. of Int. Conf. of Phys. of Semiconductors, Warsaw (Elsevier, Amsterdam, 1972), Vol. 2, p. 1135Google Scholar
17. Winterbon, K. B., Ion Implantation Range and Energy Deposition Distributions, Vol.2, IFI/plenum, New York (1975).Google Scholar
18. Goldstein, B., Phys. Rev. 121, 1305 (1961).Google Scholar