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Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

Published online by Cambridge University Press:  17 March 2011

Mudith S. A. Karunaratne ,
Janet M. Bonar ,
Jing Zhang  and
Arthur F. W. Willoughby
Mudith S. A. Karunaratne
Affiliation:
Materials Research Group, School of Engineering Sciences and Blackett Laboratory, Department of Physics, Imperial College London, Prince Consort Road, London SW7 2BW, UK
Janet M. Bonar
Affiliation:
School of Electronics & Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, UK
Jing Zhang
Affiliation:
Blackett Laboratory, Department of Physics, Imperial College London, Prince Consort Road, London SW7 2BW, UK
Arthur F. W. Willoughby
Affiliation:
Materials Research Group, School of Engineering Sciences and Blackett Laboratory, Department of Physics, Imperial College London, Prince Consort Road, London SW7 2BW, UK
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Abstract

In this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.

Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B8.6
Copyright
Copyright © Materials Research Society 2004

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