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Effect of GaAs Surface Stoichiometry on The Interface of As-Grown Epitaxial ZnSe/Epitaxial GaAs Heterostructures

Published online by Cambridge University Press:  21 February 2011

J. Qiu ,
R.L. Gunshor ,
M. Kobayashi ,
D.R. Menke ,
Q.-D. Qian ,
D. Li  and
N. Otsuka
J. Qiu
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
R.L. Gunshor
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
M. Kobayashi
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
D.R. Menke
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
Q.-D. Qian
Affiliation:
School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907
D. Li
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
N. Otsuka
Affiliation:
Materials Engineering, Purdue University, West Lafayette, Indiana 47907
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Abstract

In the study reported here, the GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe to form epitaxial ZnSe/epitaxial GaAs interfaces. The structures were grown by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. A dramatic reduction of interface state density occurred when the GaAs epilayer was made As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 115
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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