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Doped Channel MBE GaAs Field Effect Transistor (MEDFET) with Laser Processed Ohmic Contacts

Published online by Cambridge University Press:  26 February 2011

G. Halkias ,
Z. Hatzopoulos  and
A. Christou
G. Halkias
Affiliation:
Research Center of Crete/Foundation for Research and Technology-Hellas, Heraklio, Crete, Greece
Z. Hatzopoulos
Affiliation:
Research Center of Crete/Foundation for Research and Technology-Hellas, Heraklio, Crete, Greece
A. Christou
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

A doped channel heterojunction Field Effect Transistor (Metal-Doped Channel Field Effect Transistor, MEDFET) was fabricated using a molecular beam epitaxially (MBE) grown structure and excimer laser processed TiW-silicide ohmic contacts and TIW-Si gate metallization. The device was characterized at X-band frequencies in order to investigate the potential benefits of the semiconductor MBE structure and the potential stability of the laser processed TiW/Si electrode metallizations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 647
Copyright
Copyright © Materials Research Society 1989

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References

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