Hostname: page-component-6bf8c574d5-h6jzd Total loading time: 0.001 Render date: 2025-02-15T10:32:43.533Z Has data issue: false hasContentIssue false
  • English
  • Français

Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

Published online by Cambridge University Press:  15 February 2011

Werner Möhling ,
H. Weishart  and
E. Bauser
Werner Möhling
Affiliation:
Max.-Planck-Arbeitsgruppe “Röntgenbeugung“, Hausvogteiplatz 5-7, D-O-1080 Berlin, Germany
H. Weishart
Affiliation:
Max-Planck-.Institut für Festkörperforschung, Heisenbergstraβe 1, D-W-7000 Stuttgart 80, Germany
E. Bauser
Affiliation:
Max-Planck-.Institut für Festkörperforschung, Heisenbergstraβe 1, D-W-7000 Stuttgart 80, Germany
Get access

Abstract

Dislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Weishart, H., PhD Thesis Stuttgart 1992 Google Scholar
[2] Frank, F.C., Discuss. Faraday Soc., 5, 48 (1949)Google Scholar
[3] Burton, W.K., Cabrera, N. and Frank, F.C., Phil. Trans. Roy. Soc. London, Ser. A 243, 299 (1951)Google Scholar
[4] Verma, A.R., Crystal Growth and Dislocations (Butterworths, London, 1953)Google Scholar
[5] Dekeyser, W. and Amelinck, S., Les Dislocations et la Croissance des Cristaux (Masson, Paris, 1955)Google Scholar
[6] Bethge, H., Phys. Stat. Sol. 2, 21 (1962)Google Scholar
[7] Keller, K. W., Phys. Stat. Sol. 36, 369 (1968)Google Scholar
[8] Chernov, A.A., Lecture Notes L-5, 2nd Int. Spring School on Crystal Growth (ISSCG2), Japan 1974 Google Scholar
[9] Frank, F.C., J. Crystal Growth 51, 367 (1981)CrossRefGoogle Scholar
[10] Bauser, E. and Hagen, W., J. Cryst. Growth 50, 771 (1980)Google Scholar
[11] Bauser, E. and Strunk, H., J. Cryst. Growth 51, 362 (1981)Google Scholar
[12] Bauser, E. and Strunk, H., Thin Solid Films 93, 185 (1982)Google Scholar
[13] Kaganer, V.M. and Möhling, W., Phys. Stat. Sol. (a) 123, 379 (1991)Google Scholar
[14] Morlock, U., Kelsch, M. and Bauser, E., J. Crystal Growth 87, 343 (1988)Google Scholar
[15] Möhling, W., Weishart, H. and Bauser, E., accepted for publication in J. Crystal GrowthGoogle Scholar
[16] Phillipp, F (private communication)Google Scholar