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Dislocation Trapping Potential Measured by SEM-CCM

Published online by Cambridge University Press:  28 February 2011

Sam Mil'Shtein
Sam Mil'Shtein*
Affiliation:
Solid State Science Group, Cabot Corporation, Concord Road, Billerica, Massachusetts, 01821
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Abstract

The intensity of contrast and width of the image of a single dislocation in silicon were measured versus bias of Schottky barrier at room temperature. A regime of measurements was established, which reduced dramatically the number of variable parameters involved in contrast formation. In addition, using the right regime of SEM-CCM one can determine the position of a defect relative to the surface of the specimen without doing TEM measurements. It was shown for the first time that from contrast readout one can determine the dislocation electrical potential. A model of image formation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 487
Copyright
Copyright © Materials Research Society 1985

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References

1. Mil'shtein, S., Joy, D., Ferris, S. and Kimerling, K.. Phys. Stat. Solidi, A, 84, 363–369, (1984).Google Scholar
2. Mil'shtein, S. and Joy, D., submitted.Google Scholar
3. Toth, S.. Proceedings of 4th Oxford Conference on Microscopy of Semiconducting Materials (to be published).Google Scholar
4. Ioannau, D. and Davidson, S.. Phys. Stat. Solidi, A, 48, K1–K4, (1978).Google Scholar
5. Ourmaszd, A. and Booker, G.. Phys. Stat. Solidi, A, 55, 771, (1979).Google Scholar
6. Mil'shtein, S. and Senderichin, A.. Phys. Stat. Solidi, B, 109, 429–436, (1982).Google Scholar