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Dislocation Nucleation in GeSi/Si(100) Strained Epilayers

Published online by Cambridge University Press:  28 February 2011

D.J. Eaglesham ,
E.P. Kvam ,
D.M. Maher ,
C.J. Humphreys  and
J.C. Bean
D.J. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
E.P. Kvam
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, United Kingdom
D.M. Maher
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
C.J. Humphreys
Affiliation:
Department of Materials Science and Engineering, University of Liverpool, P.O. Box 147, Liverpool L69 3BX, United Kingdom
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
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Abstract

The energetics of dislocation nucleation mechanisms in strained layers are calculated: for strains below 1% nucleation of new dislocations at the surface seems implausible. An experimental TEM study of the first dislocations in lowmismatch GeSi/Si epilayers suggests that dislocations are appearing through a completely novel type of dislocation source. 1/6<114> stacking faults which we observe in unrelaxed films appear to dissociate to emit a glissile dislocation. This source differs from all previous mechanisms in that it occurs in “dislocation-free” material, and a single fault can generate two distinct types of dislocation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 397
Copyright
Copyright © Materials Research Society 1989

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