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Diffusion of Metallic Impurities in Semiconductor Thin Film

Published online by Cambridge University Press:  01 January 1992

Alexander V. Vaysleyb
Alexander V. Vaysleyb*
Affiliation:
Columbia University, Henry Krumb School of Mines, New York, NY 10027
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Abstract

The diffusion transport of metal impurities in semiconductors is considered. Critical magnitude of dislocation density and critical sample size are obtained at which the diffusion kinetics change from the interstitial impurity regime of diffusion transport to the self-interstitial regime or the vacancy regime. It is predicted that the critical density of dislocations decreases with increasing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992 , 373
Copyright
Copyright © Materials Research Society 1993

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References

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