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Diffusion of Gold Into Silicon. W-Shaped Concentration Profiles of Gold.

Published online by Cambridge University Press:  01 January 1992

A.V. Vaysleyb  and
J. Malinsky
A.V. Vaysleyb
Affiliation:
Department of Material Science, School of Mines, Columbia University, N.Y. 10027
J. Malinsky
Affiliation:
Department of Material Science, School of Mines, Columbia University, N.Y. 10027
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Abstract

Diffusion of gold atoms into silicon crystals was considered. It was shown that W-shaped gold profiles in silicon can be explained in the framework of both the dissociative and the kickout mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 291: Symposium O – Materials Theory and Modeling , 1992 , 379
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Stolwijk, N.A., Holzl, J., Frank, W., Hauber, J. and Mehrer, H., Phys. Stat. Sol. A104. 225 (1987)Google Scholar
2. Vaisleib, A.V., Goldiner, M.G., J.Phys.D.Appl.Phys. 24, 1832 (1991)Google Scholar
3. Vaisleib, A.V., Goldiner, M.G., Keloqlu, O.Yu. and Kotov, I.N., J.Appl. Phys. 70,6809 (1991)Google Scholar
4. B ronner, G.B. and Plummer, J.D., J.Appl. Phys. 61,5286 (1987)Google Scholar
5. Tan, T.Y. and Gosele, U., Appl. Phys., A37. 1 (1985)Google Scholar