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Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

Published online by Cambridge University Press:  25 February 2011

N. J. Kepler  and
N. W. Cheung
N. J. Kepler
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory, University of California, Berkeley, CA 94720
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Abstract

Ion-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 291
Copyright
Copyright © Materials Research Society 1985

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References

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