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Desorption Kinetics of Indium at the InAs/GaAs(001) Heterointerface

Published online by Cambridge University Press:  25 February 2011

Ron Kaspi  and
Keith R. Evans
Ron Kaspi
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELR), Wright-Patterson Air Force Base, Ohio 45433
Keith R. Evans
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELR), Wright-Patterson Air Force Base, Ohio 45433
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Abstract

Desorption Mass Spectrometry (DMS) is used to monitor In desorption kinetics at the InAs/GaAs (001) heterointerface. In incorporation is determined to be significantly affected by temperature, surface reconstruction, and the V/III flux ratio. It is shown that the onset of the As-stabilized (2×4)-to-In-stabilized (4×2) surface phase transition is surface stoichiometry dependent, and that both the As-stabilized and the In-stabilized surface exhibit first order desorption behavior. Desorption activation energy of In from the (2×4) and the (4×2) surface is measured. In addition to an In-stabilized regime, an In-accumulated regime is identified by its deviation from first order desorption behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 73
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

See, for example, Klem, J., Masselink, W.T., Arnold, D., Fisher, R., Morkoç, H., Lee, K., and Shur, M.S., J. Appl. Phys., 54, 5214 (1983).Google Scholar
2. Evans, K.R., Stutz, C.E., Lorance, D.K., and Jones, R.L., J. Vac. Sci. Technol., B7, 259, (1989).Google Scholar
3. SpringThorpe, A.J. and Mandeville, P., J. Vac. Sci. Technol, B6, 754, (1988).3.Google Scholar
4. Brennan, T.M., Tsao, J.Y., and Hammons, B.E., J. Vac. Sci. Technol., A10, 33, (1992).Google Scholar
5. Turco and Massies, J., Appl. Phys. Lett., 51, 1989, (1987).Google Scholar
6. Knall, J., Barnett, S.A., Sundgren, J.-E., and Greene, J., Surf. Sci., 209, 314, (1989).Google Scholar
7. Newstead, S.M., Kubiak, R.A., and Parker, E.H.C., J. Cryst. Growth, 81, 49, (1987).Google Scholar
8. Drathen, P., Ranke, W., and Jacobi, K., Surf. Science, 77, L162, (1978).Google Scholar
9. Fukui, T., J. Appl. Phys., 57, 5188, (1985).Google Scholar
10. WSchaffer, J., Lind, M.D., Kowalczyk, S.P., and Grant, R.W., J. Vac. Sci. Technol., B1, 688, (1983).Google Scholar
11. Houzay, F., Guille, C., Moison, J.M., Henoc, P., and Barthe, F., J. Cryst. Growth, 81 67, (1987).Google Scholar
12. Inoue, N., J. Cryst. Growth, 111, 75, (1991).Google Scholar
13. Kaspi, R. and Barnett, S.A., Surf. Sci., 241, 146, (1991).Google Scholar
14. Heckingbottom, R., J. Vac. Sci. Technol, B3, 572, (1985).Google Scholar