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Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

Published online by Cambridge University Press:  26 February 2011

F. Peiro ,
A. Cornet ,
A. Herms ,
J. R. Morante ,
A. Georgakilas  and
G. Halkias
F. Peiro
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica, Univ. Barcelona, Diagonal 645–647, 08028 Barcelona, Spain.
A. Cornet
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica, Univ. Barcelona, Diagonal 645–647, 08028 Barcelona, Spain.
A. Herms
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica, Univ. Barcelona, Diagonal 645–647, 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica, Univ. Barcelona, Diagonal 645–647, 08028 Barcelona, Spain.
A. Georgakilas
Affiliation:
F. O. R. T. H. P. O. BOX 1527, Heraklion, Crete.
G. Halkias
Affiliation:
LCMM. Dept. Física Aplicada i Electrónica, Univ. Barcelona, Diagonal 645–647, 08028 Barcelona, Spain.
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Abstract

The crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 189
Copyright
Copyright © Materials Research Society 1992

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References

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