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Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

Published online by Cambridge University Press:  15 February 2011

Yuri A. Stotski ,
Igor O. Usov  and
Alexander V. Suvorov
Yuri A. Stotski
Affiliation:
Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia
Igor O. Usov
Affiliation:
Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia
Alexander V. Suvorov
Affiliation:
CREE Research Inc., Durham, NC, 27713, USA, asuvorov@cree.com
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Abstract

Deep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 649
Copyright
Copyright © Materials Research Society 1997

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