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Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  21 March 2011

Shigeo Yamaguchi ,
Yasuo Iwamura ,
Masayoshi Kosaki ,
Yasuhiro Watanabe ,
Shingo Mochizuki ,
Tetsuya Nakamura ,
Yohei Yukawa ,
Shugo Nitta ,
Satoshi Kamiyama  and
Hiroshi Amano
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Shigeo Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama, 221-8686, Japan
Yasuo Iwamura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University 3-27-1 Rokkakubashi, Kanagawa-ku, Yokohama, 221-8686, Japan
Masayoshi Kosaki
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Yasuhiro Watanabe
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Shingo Mochizuki
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Tetsuya Nakamura
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Yohei Yukawa
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Shugo Nitta
Affiliation:
Dept. Electrical and Electronic Engineering, Meijo University
Satoshi Kamiyama
Affiliation:
Dept. Materials Science and Engineering and High-Tech Research Center, Meijo University
Hiroshi Amano
Affiliation:
Dept. Materials Science and Engineering and High-Tech Research Center, Meijo University
Isamu Akasaki
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

We have studied the crystalline and electrical properties of AlInN/GaN superlattices (SLs) and strained AlN/GaN SLs on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. The SLs were grown using N2 carrier gas. X-ray analysis showed the eighth order satellite peak in AlInN/GaN SLs. Hall measurement showed an electron mobility of 946 cm2/Vs at highest (a sheet carrier density of 2.9x1012 cm-2) for AlInN/GaN 5SLs on GaN at 295K, and showed a value of 11432 cm2/Vs (1.99x1012cm-2) at 170K, and a value of 2610 cm2/Vs (3.38x1012cm-2) at 295K for AlN/GaN 10SLs on GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I9.5.1
Copyright
Copyright © Materials Research Society 2002

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