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Cross-sectional Cathodoluminescence Study in Ga-polar and N-polar GaN Epilayers

Published online by Cambridge University Press:  17 March 2011

X. L. Du ,
D. H. Lim ,
K. Xu ,
B. L. Liu ,
A. W. Jia ,
K. Takahashi  and
A. Yoshikawa
X. L. Du
Affiliation:
Center for Frontier Electronics & Photonics, Chiba University-Venture Business Laboratory 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
D. H. Lim
Affiliation:
Center for Frontier Electronics & Photonics, Chiba University-Venture Business Laboratory 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
K. Xu
Affiliation:
Center for Frontier Electronics & Photonics, Chiba University-Venture Business Laboratory 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
B. L. Liu
Affiliation:
Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
A. W. Jia
Affiliation:
Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
K. Takahashi
Affiliation:
Department of Media Science, Teikyo University of Science & Technology, 2525 Yatsuzawa, Uenohara, Kitatsurugun, Yamanashi 409-0193, Japan
A. Yoshikawa
Affiliation:
Center for Frontier Electronics & Photonics, Chiba University-Venture Business Laboratory 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan Department of Electronics and Mechanical Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
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Abstract

Highly spatial resolved cross-sectional cathodoluminescence (CL) has been used to study the difference in the defect-formation and growth-mechanism between Ga-polar and N-polar GaN epitaxial layers. These epilayers were grown on sapphire substrates by low pressure MOCVD. Their polarities were controlled by the sapphire nitridation and the trimethylaluminum (TMAl) pre-flow just before the conventional two-step growth, and were confirmed with the coaxial impact collision ion scattering spectroscopy (CAICISS). For the Ga-polar GaN epilayers, cross-sectional CL images show distinct two layers, the upper layer with dark lines along c-direction and the layer close to the film-substrate interface with pyramidal dark regions. These two layers correspond to quasi 2D and 3D growth mode respectively. Whereas, the crosssectional CL image taken on the N-polar epilayers is predominated with small dark spots which were randomly distributed throughout the whole GaN epilayer, illustrating the predominant island growth mode in N-polar films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.16
Copyright
Copyright © Materials Research Society 2001

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References

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