Hostname: page-component-6dbcb7884d-fw45b Total loading time: 0 Render date: 2025-02-13T18:06:30.939Z Has data issue: false hasContentIssue false
  • English
  • Français

Cracking and Delamination of Heteroepitaxial Barium Hexaferrite Films

Published online by Cambridge University Press:  10 February 2011

S.A. Oliver ,
I. Kozulin ,
N.E. Mcgruer ,
S.D. Yoon  and
C. Vittoria
S.A. Oliver
Affiliation:
Center for Electromagnetic Research, Northeastern University, Boston, MA 02115, saoliver@neu.edu
I. Kozulin
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115.
N.E. Mcgruer
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115.
C. Vittoria
Affiliation:
Department of Electrical and Computer Engineering, Northeastern University, Boston MA 02115.
Get access

Abstract

Experimental results are shown for the structural and stress behaviors of c-axis oriented barium hexaferrite films on c-plane sapphire (Al2O3) substrates as a function of oxygen growth pressure and film thickness. It is shown that films deposited at 20 mTorr crack and delaminate at thicknesses above 15 µm, but that evidence for these large stresses is not apparent in either substrate curvature measurements or distortion of the c-axis lattice constant for thinner films (< 2 µm). In contrast, films (< 4 µm) deposited at 300 mTorr show large substrate curvatures that relax with increasing film thickness, in tandem with the formation of first large outgrowths, and then polycrystalline grains as the original c-axis film texture is randomized. Correlations between these observations are made to explain the complex evolution of properties in these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 197
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Carosella, C.A., Chrisey, D.B., Lubitz, P., Horwitz, J.S., Dorsey, P., Seed, R. and Vittoria, C., J. Appl. Phys. 71, 5107 (1992).Google Scholar
[2] Dorsey, P.C., Chrisey, D.B., Horwitz, J.S., Lubitz, P. and Auyeung, R.C.Y., IEEE Trans. Magn. 30, 4512 (1994).Google Scholar
[3] Shinde, S.R., Ramesh, R., Lofland, S.E., Bhagat, S.M., Ogale, S.B., Sharman, R.P. and Venkatesan, T., Appl. Phys. Lett. 72, 3443 (1998).Google Scholar
[4] Oliver, S.A., Chen, M.L., Kozulin, I. and Vittoria, C., J. Magn. Magn. Mat. 213, 326 (2000).Google Scholar
[5] Thouless, M.D., IBM J. Res. Develop. 38, 367 (1994).Google Scholar
[6] Dorsey, P.C., Qadri, S.B., Feldman, J.L., Horwitz, JS., Lubitz, P., Chrisey, D.B. and Ings, J.B., J. Appl. Phys. 79, 3517 (1996).Google Scholar
[7] CRC Materials Science and Engineering Handbook, edited by Shackelford, J.F., pp. 308–314 (CRC Press, Boca Raton, 1994).Google Scholar
[8] Murakami, M., Kuan, T.-S. and Blech, I.A., in Treatise on Materials Science and Technology, vol. 24, edited by Tu, K.N. and Rosenberg, R. (Academic Press, Boston 1982).Google Scholar
[9] Suhir, E., J. Appl. Mech. 56, 595 (1989).Google Scholar
[10] Segmuller, A. and Murakami, M., in Treatise on Materials Science and Technology, vol. 27, edited by Tu, K.N. and Rosenberg, R. (Academic Press, Boston 1988).Google Scholar
[11] International Centre for Diffraction Data (ICDD) card number 43-1022.Google Scholar
[12] International Centre for Diffraction Data (ICDD) card numbers 39-1433 and 43-0002.Google Scholar
[13] Kojima, H., Ferromagnetic Materials, Vol. 3, edited by Wohlfarth, E.P. (North-Holland Publishing Co., New York, 1982).Google Scholar