Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-11T18:59:30.678Z Has data issue: false hasContentIssue false
  • English
  • Français

The Copper Corrosion and Sulfur Contamination Generated by a Three-Step Copper Chemical-Mechanical Polishing Process

Published online by Cambridge University Press:  01 February 2011

Chun-Ping Liu ,
Yen-Shih Ho ,
Tien-Chen Hu  and
Bae-Heng Tseng
Chun-Ping Liu
Affiliation:
d8836804@student.nsysu.edu.tw, Institute of Materials Science and Engineering, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaohsiung, N/A, 804, Taiwan, 886-7-525-4099
Yen-Shih Ho
Affiliation:
yensho@mail.ee.kuas.edu.tw, Kaohsiung University of Applied Sciences, Department of Electrical Engineering, Kaohsiung, N/A, 807, Taiwan
Tien-Chen Hu
Affiliation:
TJHu@tsmc.com, National Chen Kung University, Institute of Engineering Management, Tainan, N/A, 701, Taiwan
Bae-Heng Tseng
Affiliation:
baeheng@mail.nsysu.edu.tw, National Sun Yat-Sen University, Institute of Materials Science and Engineering, Kaohsiung, N/A, 804, Taiwan
Get access

Abstract

This article shows the root cause of Cu corrosion and sulfur contamination due sulfite vapor reflow through drainpipe of load cup to the original three-step Cu CMP equipment. Now, we provide a solution which to modify the arrangement of the drainpipe in original three-step Cu CMP equipment. This is an effective implement for reduction the defects of Cu corrosion and sulfur contamination from long-term observations.

Keywords

CMPcorrosionCu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F09-10
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1 Helneder, H., Korner, H., Mitchell, A., Schwerd, M. and Seidel, U., Microelectronic Engineering 55, 257 (2001)Google Scholar
2 Ritzdorf, T., Chen, L., Fulton, D. and Dundas, C., Proc. IEEE Intl. Interconnect Technol. Conf., 287 (1999).Google Scholar
3 Lakshminarayanan, S., Steigerwald, J., Price, D. T., Bourgeois, M., Chow, T. P., Gutmann, R. J. and Murarka, S. P., IEEE Electron Device Lett. 15, 307 (1994).Google Scholar
4 Guha, S., Sethuraman, A., Gotkis, Y., Kistler, R. and Steckenrider, S., Solid State Technology 44–4, (2001).Google Scholar