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Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE

Published online by Cambridge University Press:  26 February 2011

P. Wisk ,
C. R. Abernathy ,
S. J. Pearton ,
F. Ren ,
T. Fullowan  and
J. Lothian
P. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
T. Fullowan
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have investigated the effect of growth temperature and V/III ratio on dopant incorporation from disilane (Si2H6) and tetraethyltin (TESn) over the temperature range 475°C-525°C during growth of GaAs by metal organic molecular beam epitaxy (MOMBE). Increasing V/III ratio produced only a slight decrease in the dopant concentration while increasing growth temperature resulted in slighdy higher dopant levels. Addition of Al and H to the growth surface via introduction of trimethylamine alane had no apparent effect on dopant incorporation. No significant differences were observed in the incorporation behaviors of Si2H6 and TESn, and both sources yielded comparable base-collector junction behavior when used for growth of heterojunction bipolar transistors (HBTs).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 63
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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