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Chemical Beam Epitaxial Growth of GaAs Epilayer on GaAs (100) Substrate Using Unprecracked Arsine and Trimethylgallium

Published online by Cambridge University Press:  26 February 2011

Seong-Ju Park ,
Jae-Ki Sim ,
Jeong-Rae Ro ,
Byueng-Su Yoo ,
Kyung-Ho Park  and
El-Hang Lee
Seong-Ju Park
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
Jae-Ki Sim
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
Jeong-Rae Ro
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
Byueng-Su Yoo
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
Kyung-Ho Park
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
El-Hang Lee
Affiliation:
Research Department, Electronics & Telecommunications Research Institute, P. O. Box 8, Daeduk Science Town, Daejeon City, 305–606, Republic of, Korea.
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Abstract

We present preliminary results aimed at investigating the effects of unprecracked arsine and trimethylgallium on the CBE (chemical beam epitaxy) growth of GaAs epilayers. We find that the growth rate rises linearly as the V/III ratio is increased when TMGa and arsine are used. All of the runs produced p-type material mainly due to carbon incorporation with the hole concentration typically of 1017 cm−3. The impurity content of the layers was found to depend distinctly on the pressure of TMGa. The significant drop in hole concentration is due in part to the hydrogen atoms generated from decomposed AsH3 which then aids in the removal of CH3 radicals on the surface. As a result of using unprecracked arsine for growth of the GaAs epilayers, we measure substantial improvements in their electrical and optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 207
Copyright
Copyright © Materials Research Society 1992

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References

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