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Characterization of Thin PtSI/p-Si Schottky Diodes

Published online by Cambridge University Press:  26 February 2011

J. Silverman ,
P. Pellegrini ,
J. Comer ,
A. Golvbovic ,
M. Weeks ,
J. Mooney  and
J. Fitzgerald
J. Silverman
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
P. Pellegrini
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
J. Comer
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
A. Golvbovic
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
M. Weeks
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
J. Mooney
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
J. Fitzgerald
Affiliation:
Rome Air Development Center, Hanscom AFB, MA 01731
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Abstract

A series of PtSi on p-type Si diodes have been characterized in order to establish correlations among processing parameters, metallurgical features and electrical properties. Characterization techniques include analytical (TED, TEM), electrical (current-voltage characteristics), and optical (photoemission and absorption). The fabrication techniques involve e-beam evaporation of platinum layers at UHV levels onto VLSI grade (100) p-type silicon substrates. The silicide layers are formed via sub-eutectic solid state diffusion at 350°C. The main trends with thickness as well as possible interrelationships are described. An unexpected result is the presence of unreacted polycrystalline Pt and Pt2Si at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 515
Copyright
Copyright © Materials Research Society 1986

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References

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