Hostname: page-component-6bf8c574d5-7jkgd Total loading time: 0 Render date: 2025-02-14T12:07:56.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of SI/SiO2 Interfaces Using Tem Lattice Imaging and X-Ray Micro Diffraction Techniques

Published online by Cambridge University Press:  28 February 2011

P. K. Roy  and
V. C. Kannan
P. K. Roy
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
V. C. Kannan
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
Get access

Abstract

This paper discusses two analytical techniques: (i) a high resolution transmission electron microscopy (TEM) technique of imaging Si (111) planes at Si/SiO2 interface, and (ii) an accurate measurement of the stress in silicon (Σsi) just below the interface using x-ray microdiffraction (XRMD) technique. The combination of these two techniques allows us to probe Si/SiO2 interfaces for various oxides (75-250Å) grown by different oxidation processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 367
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baglee, D. A. and Shah, P. L., in “VLSI Electronics: Microstructure Science,” Einspruch, N. G. and Larrabe, G. B. eds., Academic Press, NY, 7 165 (1983).Google Scholar
2. Brower, K. L., Phys. Rev. B, 3, 4471 (1986).Google Scholar
3. Kern, W. and Puotinen, D. A., RCA Rev., 31, 187 (1970).Google Scholar
4. Monkowski, J., Solid State Tech., 58, (July 1979).Google Scholar
5. Roy, P. K., “Growth-Modified Thermal Oxidation Process for Thin Oxides,” Filed for U. S. Patent (1988).Google Scholar
6. Roy, P. K. et al. , “Semiconductor Device With Low Defect Density Oxides,” Application for U. S. Patent Serial No. 138, 633 (Dec. 28, 1987).Google Scholar
7. Ourmazd, A., “Defects in Semi-Conductors,” ed. Bardaleeken, H. J. Von, 10, Trans Tech Pub., Sweden (1986).Google Scholar
8. Wagner, C. N. J., Local Atomic Arrangements Studied by X-ray Diffraction, edited by Cohen, J. B. and Hilliard, J. E., (Gorden and Breach, NY), 1965, Chapter 7.Google Scholar
9. Roy, P. K., U. S. Patent No. 4,631,804 (Dec., 1986).Google Scholar
10.“Experimental High Resolution Electron Microscopy” by Spence, J. C. H., Clarendon Press, Oxford (1981).Google Scholar
11.“Observation of Defects in Crystalline Polymers by High Resolution Electron Microscopy” by Martin, D. T. and Thomas, E. L., MRS Bulletin, 1 27 (1987).CrossRefGoogle Scholar
12. Howe, R. T. and Muller, R. S., J. Appl. Phys. 54 4674 (1983).CrossRefGoogle Scholar