Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-14T12:05:45.280Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of HF Treated (100) Si Surfaces by Surface Charge Analysis (SCA)

Published online by Cambridge University Press:  25 February 2011

Jon T. Fitch
Jon T. Fitch*
Affiliation:
Motorola Inc., Advanced Products Research and Development Laboratory, MD-K10, 3501 Ed Bluestein Blvd., Austin, TX 78721
Get access

Abstract

Surface Charge Analysis (SCA), and ellipsometry have been used to study the stability over time of HF treated (100) silicon surfaces as a function of the post-HF rinse time. Using SCA, the electrical properties of the chemical terminating layer of these silicon surfaces were measured. The surfaces which remained native oxide free the longest (−10 hours) had very low Qox and Dit values on the order of 1.0 × 1011/cm2 and 5.0 × 1010 eV−lcm−2, respectively. A good correlation was found between Dit and the native oxide thickness measured by ellipsometry. This and other results are discussed in terms of the chemical bonding on the silicon surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 427
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Hirose, M., Yasaka, T., Takakura, M., and Miyazaki, S., Solid State Technology, December 1991, p. 43.Google Scholar
[2] Zazzera, L.A., Moulder, J.F., J. Electrochem. Soc., 136(2), 484 (1989).CrossRefGoogle Scholar
[3] Sunada, T., Yasaka, T., Takakura, M., Sugiyama, T., Miyazaki, S. and Hirose, M., Japan. Journal of Appl. Phys., 29(12) L2408 (1990).CrossRefGoogle Scholar
[4] Graf, D., Grundner, M., and Schulz, R., J. Vac. Sci. Technol. A, 7(3), 808 (1989).CrossRefGoogle Scholar
[5] Grundner, M., Graf, D., Hahn, P.O., and Schnegg, Anton, Solid State Technology, February 1991, p. 69.Google Scholar
[6] Grunder, M. and Jacob, H., Appl. Phys. A, 39, 73 (1986).CrossRefGoogle Scholar
[7] Kamieniecki, E., J. Appl. Phys., 54(11), 6481 (1983).CrossRefGoogle Scholar
[8] Kamieniecki, E., J. Vac. Sci. Technol., 20(3), 811 (1982).CrossRefGoogle Scholar
[9] Neuwald, E., Hessel, H.E., Feltz, A., Memmert, U., and Behm, R.J., Appl. Phys. Lett., 60(11), 1307 (1992).CrossRefGoogle Scholar
[10] Miyauchi, A., Inoue, Y., Ohue, M., Momma, N., Suzuki, T., and Akiyama, M., J. Electrochem. Soc., 137(10), 3257 (1990).CrossRefGoogle Scholar
[11] Grunthaner, F.J. and Grunthaner, P.J., Mater. Sci. Reports, 1(2,3), 65 (1986).CrossRefGoogle Scholar