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Characterization of Denuded Zones in Silicon Wafers

Published online by Cambridge University Press:  21 February 2011

H. J. Rath ,
J. Reffle ,
D. Huber ,
P. Eichinger ,
F. Iberl  and
H. Bernt
H. J. Rath
Affiliation:
Wacker Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
J. Reffle
Affiliation:
Wacker Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
D. Huber
Affiliation:
Wacker Chemitronic GmbH, P.O. Box 1140, D-8263 Burghausen, FRG
P. Eichinger
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhardt-Allee 42, D-8000 München 60, FRG
F. Iberl
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhardt-Allee 42, D-8000 München 60, FRG
H. Bernt
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie (IFT), Paul-Gerhardt-Allee 42, D-8000 München 60, FRG
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Abstract

Different techniques are presented for the characterization of the two-layered system consisting of a precipitate-free zone and a precipitated zone, generated in CZ-grown silicon wafers by thermal processing. The diffusion length profile can be determined by surface photovoltage characteristics; measurements of the collection efficiency for excess carriers generated by alpha particles gives relevant information about the soft error performance. Finally, oxygen depth profiling by SIMS is discussed. Results are shown and compared with damage patterns obtained from cleavage face etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 193
Copyright
Copyright © Materials Research Society 1985

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References

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