Hostname: page-component-6bf8c574d5-qdpjg Total loading time: 0 Render date: 2025-02-19T03:36:01.405Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Defects and Buried Interfaces in Quantum Well Structures by Combination of Lacbed and Microscopic Cl in a Tem

Published online by Cambridge University Press:  28 February 2011

J. W. Steeds ,
Qin Luchang  and
I. K. Jordan
J. W. Steeds
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
Qin Luchang
Affiliation:
Institut fur Festkorperforschung der Kernforschungsanlage Julich GmbH, D-5170 Julich 1, Postfach 1913, Federal, Republic of Germany
I. K. Jordan
Affiliation:
Institut fur Festkorperforschung der Kernforschungsanlage Julich GmbH, D-5170 Julich 1, Postfach 1913, Federal, Republic of Germany
Get access

Abstract

High spatial resolution characterization of quantum wells has been performed by monochromatic cathodoluminescence imaging and by large angle convergent beam electron diffraction. The satellite lines to sublattice reflections which have been interpreted previously in terms of kinematical diffraction theory are here explored in detail by dynamical diffraction theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 427
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Steeds, J. W., “Performance and Applications of a STEM-cathodoluminescence System,” Journal de Physique (in press).Google Scholar
[2] Steeds, J. W., Bailey, S. J., Wang, J. N., and Tu, C. W., “TEM Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE-grown GaAs/AlGaAs,” Proceedings of a NATO Workshop held in Bristol, U.K., September, 1988 (Plenum, in press).Google Scholar
[3] Petroff, P. M., Cibrf, J.. Gossard, A. C., Dolan, G. J., and Tu, C. W., J. Vac. Sci. Tech. BB5 1204 (1984).Google Scholar
[4] Bimberg, D., Munzel, H., Steckenborn, A., and Christen, J., Phys. Rev. B31, 307 (1985).Google Scholar
[5] Cherns, D., Jordan, I. K., and Vincent, R., “Composition Profiles in A1GaAs/GaAs and InGaAsInP Structures Examined by Convergent Beam Electron Diffraction,” these proceedings.Google Scholar
[6] Steeds, J. W., Ultramicroscopy, 1 (1988).Google Scholar