Hostname: page-component-6bf8c574d5-qdpjg Total loading time: 0 Render date: 2025-02-19T03:31:36.132Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics and Recovery of SI Surfaces Plasma Etching in CHF3 / C2F6

Published online by Cambridge University Press:  25 February 2011

H.-H. Park ,
K.-H. Kwon ,
B.-H. Koak ,
S.-M. Lee ,
O.-J. Kwon ,
B.-W. Kim ,
J.-W. Lee ,
J.-B. Yoo  and
Y.-K. Sung
H.-H. Park
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
K.-H. Kwon
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
B.-H. Koak
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
S.-M. Lee
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
O.-J. Kwon
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
B.-W. Kim
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
J.-W. Lee
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
J.-B. Yoo
Affiliation:
Semiconductor Technology Division, ETRI, P.O.Box 8, Daeduk Science Town, Daejeon 305-606, Korea
Y.-K. Sung
Affiliation:
Dept. of Electric Engineering, Korea University, Sungbugkoo, Seoul, 136-701, Korea
Get access

Abstract

The effects of SiO2 reactive ion etching (RIE) in CHF3 / C2F6 on the surface properties of the underlying Si substrate have been studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. The observed two major modifications are (i) a ∼50nm thick silicon layer which contains carbon and fluorine and (ii) 2∼3nm thick residue layer composed entirely of carbon, fluorine, oxygen and hydrogen on the silicon surface. The thermal behaviors of attributed peaks for C 1s, Si 2p, O 1s and F 1s of residue film have been analyzed after in-situ resistive anneal under ultra high vacuum (UHV) condition. C-F1, C-F2 and C-F3 bonds decompose and form C-CFx (x≤3) bonds above 200°C. Above 400°C, C-CFx bonds also decompose to C-C/H bonds. For recovery of the modified silicon surface, reactive ion etched specimens have been exposed to an oxygen plasma. By XPS analysis, the effect of an O2 plasma treatment has been revealed to be completed within 20min. With an O2 plasma pre-treated, a rapid thermal anneal (RTA) treatment as low as 500°2 is found to be effective for removal of impurities in the silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 219
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Winters, H. F., J. Appl. Phys. 49(10), 5165 (1978)Google Scholar
2. Coburn, J. W., J. Appl. Phys., 50(8), 5210 (1979)Google Scholar
3. Oehrlein, G. S., Tromp, R.M., Tsang, J. C., Lee, Y. H. and Petrillo, E. J., J. Electrochem. Soc. 132(6), 1441 (1985)Google Scholar
4. Cardinaud, C., Rhounna, A., Turban, G. and Grolleau, B., J. Electrochem. Soc., 135(6), 1472 (1988)CrossRefGoogle Scholar
5. Vitkavage, D. J. and Mayer, T. M., J. Vac. Sci. Technol. B, 133(5), 1002 (1986)Google Scholar
6. Oehrlein, G. S., Clabes, J. G. and Spirito, P., J. Electrochem. Soc. 133(5), 1002 (1986)Google Scholar
7. Fonash, S. J., Singh, R., Rohatgi, A., Rai-Choudhury, P., Caplan, P. J. and Poindexter, E. H., J. Appl. Phys. 58(2), 862 (1985)Google Scholar
8. Oehrlein, G. S., Scilla, G. J. and Jeng, S. J., Appl. Phys. Lett. 52(11), 907 (1988)Google Scholar
9. Takakura, M., Sunada, T., Miyazaki, S. and Hirose, M., Pro. 21st Int. Conf. on Solid State Devices and Materials, Tokyo, Aug. 28-30, 1989, pp. 389–392 Google Scholar