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Cathodoluminescence and Micro-Structure of Polycrystalline GaN Grown on ZnO/Si

Published online by Cambridge University Press:  17 March 2011

Tsutomu Araki ,
Hidetaka Kagatsume ,
Hiroaki Aono  and
Yasushi Nanishi
Tsutomu Araki
Affiliation:
Dept. of Photonics, Ritsumeikan University1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
Hidetaka Kagatsume
Affiliation:
Dept. of Photonics, Ritsumeikan University1-1-1 Noji-Higashi, Kusatsu 525-8577, Japan
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Abstract

We have investigated relationships between microscopic structure and cathodoluminescence (CL) property of polycrystalline (poly-) GaN grown by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) on ZnO/Si substrates. Very strong CL with a peak of 3.45 eV was observed from the poly-GaN, which mainly showed a columnar structure with a size of 50-100 nm. On the other hand, the intensity of CL from the poly-GaN with few columnar domains was weaker than that of the poly-GaN with the columnar structure. The CL image from the poly-GaN, in which the columnar domains were locally observed, showed a strong contrast between bright domains and a dark background. It is confirmed that these bright regions in the CL images are corresponding to the columnar domains of the poly-GaN, by comparing with the SEM images. These results suggest that the columnar domains are responsible for the strong CL from the poly-GaN grown on the ZnO/Si substrates. Cross-sectional transmission electron microscope (TEM) observation revealed that the columnar domains had high quality crystallinity with few defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.20
Copyright
Copyright © Materials Research Society 2001

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References

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