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Bubbles and Cavities Induced by Rare Gas Implantation in Silicon Oxide

Published online by Cambridge University Press:  01 February 2011

E. Ntsoenzok ,
H. Assaf  and
M.O. Ruault
E. Ntsoenzok
Affiliation:
CNRS-CERI, 3A, rue de la férollerie, 45071 Orléans, France
H. Assaf
Affiliation:
CNRS-CERI, 3A, rue de la férollerie, 45071 Orléans, France
M.O. Ruault
Affiliation:
CSNSM, CNRS-IN2P3, Batiment 108-F-91405 Orsay, France
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Abstract

In this pioneering study, we have extended noble-gas implant-induced cavity generation in Si and other semiconductors to a dielectric, viz., SiO2 by implanting a variety of inert gas species. It has been seen that helium and neon do not induce bubbles/cavities in SiO2, regardless of implantation parameters and nature of the sample. Krypton and xenon implantation however result in bubbles/cavities formation in the oxide layer. In the case of Xe a minimum threshold dose of about 1016 cm-2 is needed for their formation. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain even after a 1100°C anneal, while Xe strongly desorbs out at that temperature. C-V measurements reveal that the effective dielectric constant K is reduced from 3.9 SiO2 for bulk SiO2 to < 2.6, thus making this technique very attractive for low-k applications in Si technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E7.3
Copyright
Copyright © Materials Research Society 2005

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