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Bonding Configurations at Epitaxial CaF2/Si Interfaces

Published online by Cambridge University Press:  21 February 2011

J. L. Batstone  and
Julia M. Phillips
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974, USA
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Abstract

Determination of the bonding configuration at the epitaxial CaF2/Si(111) interface has revealed Ca-Si bonds in the interfacial plane. Removal of an unstable layer of F from the interface occurs during a rapid thermal anneal. In comparison, the CaF2/Si(100) interface is not smooth, making assignment of interface bonding configurations ambiguous. After a rapid thermal anneal, evidence for an intermediate interfacial phase is observed on Si (100). This phase does not occur on Si (111).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 351
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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