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Arsenic Incorporation in InP Epilayers and Arsenide/InP Heterostructures Grown by Chemical Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

V. Rossignol ,
A. H. Bensaoula ,
A. Freundlich ,
A. Bensaoula  and
G. Neu
V. Rossignol
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Parc Sophia Antipolis, 06560 Valbonne, France
A. H. Bensaoula
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5507
A. Freundlich
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Parc Sophia Antipolis, 06560 Valbonne, France
A. Bensaoula
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5507
G. Neu
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5507
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Abstract

Low levels of arsenic contamination have been previously reported (∼0.01%) in CBE grown InP by different groups. The level of As incorporation in InP is usually enhanced when arsenide(InGaAs, InAsP) / InP heterostructures are grown.

In this work, optimal growth conditions to minimize the non-intentional As contamination during the growth of these heterostructures are discussed. The red shift of band-edge excitons in the low temperature photoluminescence spectra as well as the analysis of high resolution X-ray diffraction patterns of InAsP/InP multi-quantum wells suggest the presence of As in InP barriers. This contamination is consistent with the ratio of As/P partial pressure (As residual in the chamber: 10-9-10-8 Torr) and the As/P incorporation rates. We have studied the influence of the growth temperature, the group-V/III flux ratio and the growth rate on the level of the As incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 181
Copyright
Copyright © Materials Research Society 1994

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References

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