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Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi2 Film and Si Substrate

Published online by Cambridge University Press:  03 September 2012

S. L. Hsia ,
T. Y. Tan ,
P. L. Smith  and
G. E. Mcguire
S. L. Hsia
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708
T. Y. Tan
Affiliation:
Dept. of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
P. L. Smith
Affiliation:
MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
G. E. Mcguire
Affiliation:
MCNC, Microelectronics Center of North Carolina, Research Triangle Park, NC 27709
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Abstract

Arsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+ (doped by As to ∼2}1019 cm−3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ∼200°C to ∼700°C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ∼2 within a distance of ∼30nm from the interface, while the incorporated As in the film is ∼30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 409
Copyright
Copyright © Materials Research Society 1994

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