Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-19T11:47:45.708Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of the Defect Pool Model in Modelling of a-Si:H Solar Cells

Published online by Cambridge University Press:  15 February 2011

Miroslav Zeman ,
Guoqiao Tao ,
Marcel Trijssenaar ,
Joost Willemen ,
Wim Metselaar  and
Ruud Schropp
Miroslav Zeman
Affiliation:
Delft University of Technology, Electronic Components, Technology and Materials, Mekelweg 4, 2628 CD Delft, The Netherlands
Guoqiao Tao
Affiliation:
Delft University of Technology, Electronic Components, Technology and Materials, Mekelweg 4, 2628 CD Delft, The Netherlands
Marcel Trijssenaar
Affiliation:
Delft University of Technology, Electronic Components, Technology and Materials, Mekelweg 4, 2628 CD Delft, The Netherlands
Joost Willemen
Affiliation:
Delft University of Technology, Electronic Components, Technology and Materials, Mekelweg 4, 2628 CD Delft, The Netherlands
Wim Metselaar
Affiliation:
Delft University of Technology, Electronic Components, Technology and Materials, Mekelweg 4, 2628 CD Delft, The Netherlands
Ruud Schropp
Affiliation:
Utrecht University, Department of Atomic and Interface Physics, Princetonplein 5, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
Get access

Abstract

The increasing complexity of hydrogenated amorphous silicon (a-Si:H) based solar cells requires continuous extending and testing of the computer models which are used for their simulation. The calculation of the defect states density in the bandgap of a-Si:H based on the defect pool model (DPM) has been rally implemented in the ASA (Amorphous Semiconductor Analysis) computer program developed at Delft University of Technology. We used the technique of inverse modelling to verify the DPM and to calibrate it by fitting the dark and illuminated J-V characteristics of a single-junction a-Si:H solar cell fabricated at Utrecht University. The DPM was also used in simulating the absorption coefficient of a-Si:H layers. Using the DPM for the defect states distribution, a good agreement between simulated and measured data was obtained. The values of the material parameters needed for obtaining the best fits are more realistic than using a conventional model for the defect states distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 639
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Winer, K., Phys. Rev. B, 41, (17), 12150 (1990)Google Scholar
2. Powell, M.J. and Deane, S.C., Phys. Rev. B, 48, (15) 10815, (1993)Google Scholar
3. Schumm, G., Phys. Rev. B, 49 (4), 2427 (1994)Google Scholar
4. von den Linden, M.B., Schropp, R.E.I., van Sark, W.G.J.H.M., Zeman, M., Tao, G., and Metselaar, J.W., in: Proc. of EPVSEC-11, Montreux, Switzerland (1992), pp 647–650.Google Scholar
5. Madan, A., Rava, P., Schropp, R.E.I. and von Roedern, B., Appl. Surf. Science, 70/71, 716–721, (1993).Google Scholar
6. van den Heuvel, J., PhD thesis, Delft University of Technology, 1989.Google Scholar
7. Tao, G., Girwar, B.S., Landweer, G.E.N., Zeman, M., and Metselaar, J.W., in Amorphous Silicon Technology - 1993. ed. by Schiff, E.A. et al., (Mater. Res. Soc. Proc. 297, San Francisco, 1993), pp 845 - 849.Google Scholar
8. Zeman, M., Willemen, J.A., Solntsev, S., and Metselaar, J.W., Solar Energy Materials and Solar Cells, 34, 557–563, (1994).Google Scholar
9. Solntsev, S., Trijssenaar, M., Zeman, M., Willemen, J., and Metselaar, J.W., in Proc. of EPVSEC-12, Amsterdam, the Netherlands (1994), pp 100–103.Google Scholar