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Application of a-Si Diodes to Liquid Crystal Display Panels

Published online by Cambridge University Press:  26 February 2011

Hiroshi Sakai ,
Michinari Kamiyama  and
Eizo Tanabe
Hiroshi Sakai
Affiliation:
Fuji Electric Co. Research and Development, Ltd.2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, JAPAN
Michinari Kamiyama
Affiliation:
Fuji Electric Co. Research and Development, Ltd.2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, JAPAN
Eizo Tanabe
Affiliation:
Fuji Electric Co. Research and Development, Ltd.2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, JAPAN
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Abstract

An integrated a-Si:H p-i-n thin film diode (TFD) substrate having an ring structure has been developed for driving active matrix liquid crystal display (LCD) panels. The TFD sub-trate developed is for a 5.5″ LCD panel with 115,200 (240×480) pixels. A series of technical data on the fabrication process and the electrical properties of the a-Si TFD are presented. It has been shown that the forward bias characteristics of TFD were mainly dominated by the carrier recombination in the i layer near the p/i interface, and control of the plasma etching condition for the a-Si TFD patterning was very important to reduce the leak current and to improve the production yield.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 375
Copyright
Copyright © Materials Research Society 1988

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