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Analysis of the Enhanced Growth Rate of Silicon-Oxide Layers in the Thin Regime by Incremental Growth

Published online by Cambridge University Press:  25 February 2011

Sergio A. Ajuria ,
Prashant U. Kenkare  and
Anh Nghiem
Sergio A. Ajuria
Affiliation:
Advanced Products Research and Development Lab, Motorola Inc., Austin TX, 78721.
Prashant U. Kenkare
Affiliation:
Advanced Products Research and Development Lab, Motorola Inc., Austin TX, 78721.
Anh Nghiem
Affiliation:
Advanced Products Research and Development Lab, Motorola Inc., Austin TX, 78721.
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Abstract

Silicon oxidation kinetics in the thin regime are studied by a unique method in which thermally grown as well as densified CVD-deposited oxides are incrementally reoxidized and measured. Strikingly higher oxidation rates are obtained through deposited oxides, as compared to thermal oxides, suggesting that oxidations are suppressed after an initial layer is grown rather than enhanced during initial layer formation. We show that these findings tend to support initial oxidation models based on stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 537
Copyright
Copyright © Materials Research Society 1993

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References

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