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An Investigation Of Vacancy Population During Arsenic Activation In Silicon

Published online by Cambridge University Press:  15 February 2011

O. Dokumaci ,
H.-J. Gossmann ,
K. S. Jones  and
M. E. Law
O. Dokumaci
Affiliation:
339 Larsen Hall, Department of Electrical Engineering, University of Florida, Gainesville, Florida 32611
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, 600 Mountain Av., Murray Hill, NJ 07974
K. S. Jones
Affiliation:
Department of Materials Science, University of Florida, Gainesville, Florida 32611
M. E. Law
Affiliation:
339 Larsen Hall, Department of Electrical Engineering, University of Florida, Gainesville, Florida 32611
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Abstract

Recent experimental investigations have shown that electrical deactivation of arsenic in silicon creates excess silicon interstitials. This study investigated the possibility of excess vacancy generation during arsenic activation. We used Sb doping superlattice structures containing six 10 nm wide Sb doped spikes separated by 100 nm. It was found that antimony diffusion was not enhanced as active arsenic concentration increased, indicating there is no observable vacancy injection out of the arsenic layer during the activation process. Plan-view transmission electron microscopy study of the samples revealed dislocation loops before the activation anneal. Although the loops completely dissolved during the activation anneal, they do not seem to be sufficient enough to absorb all the vacancies generated by the activated arsenic. When germanium was present at the surface instead of arsenic, antimony diffusion was enhanced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 151
Copyright
Copyright © Materials Research Society 1997

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