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An Hrem Study of the Microstructure of Al Contact on GaN/AlN/SiC Thin Films

Published online by Cambridge University Press:  21 February 2011

Y. Huang ,
L. Smith ,
M. J. Kim ,
R. W. Carpenter  and
R. F. Davis
Y. Huang
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704, U.S.A.
L. Smith
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695–7919, U.S.A
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704, U.S.A.
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287–1704, U.S.A.
R. F. Davis
Affiliation:
Materials Research Center, North Carolina State University, Raleigh, NC 27695–7919, U.S.A
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Abstract

The microstructure of Al/n-type GaN contact interfaces and the effects of heat treatment have been investigated. The n type GaN films (Ge doped) and A1N buffer were grown on 6H-SiC substrates by means of gas-source MBE using an ECR plasma source. The microstructure of the layers and the interfaces between layers in both as-deposited and rapid thermal annealed samples were studied by HREM and EELS. The observed results were used to analyze the growth mode of the layers and the effect of the Ge doping on the growth. On the Al/GaN interface a new phase is observed in the annealed sample. The possible structure of the new phase and its effect on electric properties is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 433
Copyright
Copyright © Materials Research Society 1995

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References

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