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Van der Waals Epitaxy of GaSe on GaAs(111)

Published online by Cambridge University Press:  22 February 2011

L. E. Rumaner  and
F.S. Ohuchi
L. E. Rumaner
Affiliation:
Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, WA 98195
F.S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, FB-10, University of Washington, Seattle, WA 98195
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Abstract

Although heteroepitaxy of lattice-matched and lattice-mismatched materials leading to artificially structured materials has resulted in impressive performance in various electronics devices, material combinations are usually limited by lattice matching constraints. A new concept for fabricating material systems using the atomically abrupt and low dimensional nature of layered materials, called van der Waals epitaxy (VDWE), has been developed. GaSe (Eg = 2.1 eV) has been deposited on the three dimensional surface of GaAs (111) using a molecular beam deposition system. GaSe was evaporated from a single Knudsen source, impinging on a heated substrate. Even with a lattice mismatch of 6% between the substrate and the growing film, good quality single crystal films were grown as determined by RHEED. The films have further been analyzed using a complementary combination of XPS and X-ray reflectivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 537
Copyright
Copyright © Materials Research Society 1994

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References

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