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Ultrathin Low Energy Simox for Low Cost, High Density Applications

Published online by Cambridge University Press:  22 February 2011

Fereydoon Namavar ,
N.M. Kalkhoran  and
A. Cremins
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford MA 01730-2396
N.M. Kalkhoran
Affiliation:
Spire Corporation, Bedford MA 01730-2396
A. Cremins
Affiliation:
Spire Corporation, Bedford MA 01730-2396
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Abstract

Silicon-on-insulator (SOI) materials made by standard energy (150 to 200 keV) separation by implantation of oxygen (SIMOX) processes have shown great promise for meeting the needs of radiation-hard microelectronics. Since much smaller doses are required, low energy SIMOX (LES) reduces cost, improves radiation hardness, and increases the throughput of any ion implanter. The process can also produce high quality thin SIMOX structures that are of particular interest for fully depleted and submicron device structures. In this paper, we address the formation as well as the material and electrical characterization of LES wafers and compare them with standard SIMOX wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1053
Copyright
Copyright © Materials Research Society 1994

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References

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