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Two-layer Model for Electroabsorption and Built-in Potential Measurements on a-Si:H pin Solar Cells

Published online by Cambridge University Press:  10 February 2011

Lin Jiang  and
E. A. Schiff
Lin Jiang
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130
E. A. Schiff
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130
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Abstract

Modulated Electroabsorption (EA) measurements have been widely used to estimate built-in potentials (Vbi) in semiconductor devices. The method is particularly simple in devices for which the built-in potential is dropped in a single layer of the device. However, experimental results in amorphous silicon and organic devices can involve at least 2 layers. In the present paper we consider the information which can be obtained about 2-layer semiconductor devices from electroabsorption measurements. In particular we describe a 2-layer EA model appropriate to a-Si:H based pin solar cells, for which both the p+ and i layers contribute to the EA signal. We present an analysis of capacitance and second harmonic measurements which yields the EA coefficient for the p+ layer of the device, and we present measurements on a-Si:H pin devices which appear consistent with this analysis. Wavelength dependent EA then yields the built-in potential across the 2-layer device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 203
Copyright
Copyright © Materials Research Society 1996

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References

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